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Terrestrial Neutron-Induced Soft Errors in Advanced Memory Devices

8 December 2008

by Takashi Nakamura, Mamoru Baba, Eishi Ibe, Yasuo Yahagi and Hideaki Kameyama, World Scientific. Hardback ISBN 9789812778819 £56 ($98).

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Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices. This book covers relevant up-to-date topics in terrestrial neutron-induced soft errors and aims to provide succinct knowledge on these soft errors by presenting several valuable and unique features. It should be of interest to students and researchers in radiation effects, nuclear and accelerator physics and cosmic-ray physics; and to engineers involved in reliability, the design/quality assurance of semiconductor devices and IT systems.

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