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Nanoscale Silicon Devices

11 November 2016

By Shunri Oda and David K Ferry (eds)
CRC Press

The CRC Handbook of Chemistry and Physics was first published in 1913 and is a well-known text, at least to older physicists from the time before computers and instant, web-based information. To find relevant data, one had to be familiar with the classification of subjects and tables in the handbook’s 2500 or so pages, but virtually everything was covered. Over the years, the CRC Press – while continuing to publish this handbook, for more than 100 years now – has grown into a large publisher that produces hundreds of titles every year in engineering, physics and other fields.

Its recent publication, Nanoscale Silicon Devices, describes a variety of investigations that are under way to develop improved and smaller electronic structures for computing, signal processing in general, or memory. Now that transistors approach the dimension of a few nanometres, less than 100 atoms in a row, methods to account for quantum effects have to be applied, as shown in the first chapter. The second chapter discusses the need to change the shape of transistors as they become smaller. The controlling gate has to extend as much as possible around the conduction channel material and, eventually, silicon may be replaced in the channel by a different semiconductor material.

Another effect due to the small size, as explained in chapter 3, is the increase of variability between devices of identical design. Single-electron devices and the use of electron spin are discussed in several of the following chapters. A major issue today, as highlighted in the book, is the reduction of power for circuits with a large number of transistors, where the leakage current in the OFF state becomes preponderant. In chapter 7, tunnel FET devices are discussed as a way to solve this problem. In chapter 6, a different approach is shown, using nanoelectromechanical ON/OFF switches integrated in the circuit.

This book is not a typical textbook, but rather a collection of 11 articles written by 20 scientists, including the editors Oda and Ferry. Each article centres on the research of its author(s) in a specific area of semiconductor-device development. One of the consequences of this structure is the abundance of internal references. Reading the book does not quite provide a firm idea about the future of electronics, but it could convince readers that much more will be possible, beyond the current state-of-the-art. One has also to keep in mind that the chip industry tends to keep useful findings under wraps and has little incentive to publish its research before products are on the shelves.

The book is a good buy if you want to get a feel about work going on at the interface between pico- and nanoelectronics. For the use of electronics in scientific research, it is essential to understand how devices are constructed and what researchers might be able to gain from them, especially when working in unusual environments such as a vacuum, space, the human body or a particle collider.

Further reading

Erik Heijne, CERN.

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