Two-terminal memristors have been getting attention for some time now, both for computer memories and for neuromorphic computing. But their usefulness has been limited, largely owing to the small number of inputs they can take. Now, Vinod Sangwan and colleagues at Northwestern University have announced that they have made multi-terminal memtransistors (hybrids of a memristor and transistor) in molybdenum disulphide (MoS2). Unlike conventional devices, which require single-crystal MoS2 flakes, this process can use polycrystalline and all-surface MoS2 films and be readily scaled up to very-large-area devices, claims the team.

Further reading

V Sangwan et al. 2018 Nature 554 500.